Search results for "P−Type Conductors"

showing 2 items of 2 documents

Transport properties of nitrogen doped p‐gallium selenide single crystals

1996

Nitrogen doped gallium selenide single crystals are studied through Hall effect and photoluminescence measurements in the temperature ranges from 150 to 700 K and from 30 to 45 K, respectively. The doping effect of nitrogen is established and room temperature resistivities as low as 20 Ω cm are measured. The temperature dependence of the hole concentration can be explained through a single acceptor‐single donor model, the acceptor ionization energy being 210 meV, with a very low compensation rate. The high quality of nitrogen doped GaSe single crystals is confirmed by photoluminescence spectra exhibiting only exciton related peaks. Two phonon scattering mechanisms must be considered in orde…

Electron mobilityOptical PhononsPhotoluminescenceMaterials scienceNitrogen AdditionsPhononExcitonGallium SelenidesHole MobilityGeneral Physics and AstronomyMonocrystalsCondensed Matter::Materials ScienceP−Type Conductors:FÍSICA [UNESCO]Condensed Matter::SuperconductivityDoped MaterialsHall EffectCondensed matter physicsPhonon scatteringScatteringDopingTemperature DependenceUNESCO::FÍSICAAcceptorDoped Materials ; Excitons ; Gallium Selenides ; Hall Effect ; Hole Mobility ; Monocrystals ; Nitrogen Additions ; Optical Phonons ; P−Type Conductors ; Temperature Dependence ; Transport ProcessesTransport ProcessesExcitons
researchProduct

Photoconductivity and photovoltaic effect in indium selenide

1983

Transport and phototransport properties of crystalline indium monoselenide (InSe) doped with a variety of elements are reported. Measured mobilities, lifetimes, and effective diffusion lengths of photoexcited carriers are used to interpret electrical and photovoltaic properties of several different structures. These include p‐n junctions, bismuth/p‐type InSe, platinum/n‐type InSe, and indium tin oxyde (ITO)/p‐type InSe. External solar efficiencies of the best devices are between 5% and 6%. The influence on the efficiency of the various parameters is evaluated, and ways of improvement are discussed.

Materials sciencePhotoconductivityInorganic chemistryN−Type ConductorsGeneral Physics and Astronomychemistry.chemical_elementPhotovoltaic effectIndium CompoundsEfficiencyCrystalsBismuthPhotovoltaic EffectCharge Carrierschemistry.chemical_compoundP−Type ConductorsIndium Selenides ; Photoconductivity ; Photovoltaic Effect ; Experimental Data ; Crystals ; Doped Materials ; Mobility ; Lifetime ; Diffusion Length ; Charge Carriers ; Electrical Properties ; P−N Junctions ; P−Type Conductors ; N−Type Conductors ; Bismuth ; Platinum ; Indium Compounds ; Tin Oxides ; Efficiency:FÍSICA [UNESCO]SelenideDoped MaterialsPlatinumMobilityIndium Selenidesbusiness.industryPhotoconductivityElectrical PropertiesDopingP−N JunctionsUNESCO::FÍSICATin OxidesDiffusion LengthchemistryOptoelectronicsExperimental DataCharge carrierTinbusinessBismuthIndiumLifetime
researchProduct